Gate-all-around FET (GAAFET) is a device with gates on all four sides of the channel. It is a silicon nanowire surrounded by a gate. InGaAs or other III-V materials are used in the channels of some gate-all-around FETs.

The market worth of gate all around FET technology in 2021 was worth USD 30.06 million, and by 2030 it will be worth USD 472.25 million at a 35.8% CAGR during the forecast period.

GAA FETs can overcome FINFET technology’s shortcomings, including a reduction in energy loss and an improvement in durability and efficiency; demand for GAA FETs is growing. As some of the shortcomings of FINFET technology have been successfully address by GAA FETs, it is anticipate that GAA FETs will eventually become a significant rival to FINFET.

Market Dynamics

Drivers

Compared to FINFETs, GAAFETs are drastically different in their design. Gate material encloses the channel segment on all sides. The design structure enables a transistor design that is significantly more energy-efficient, leading to a significant performance per watt improvement over a 5 nm FINFET technology. As a result, GAAFETs are more effective and durable than FINFETs in terms of performance. According to Semiconductor Engineering, GAA FETs performance will boost by 25% while reducing power consumption by 50%. With finFETs, both figures fell between 15% and 20%. This factor is the main force behind the expansion of the GAAFET technology market.

Restraints

The GAAFET Technology market’s growth rate is hamper by high nanosheet transistor (nanosheet FET) fabrication costs and performance problems like current breakdown and leakage.

Opportunity 

The GAA FET market has grown due to the increasing need for nanotechnology. GAAFETs are available in a variety of sizes and geometries, including hexagonal, nanosheet, nanowire, nano rings, and nano slab. This idea is based on nanotechnology and claims to fit 30 billion transistors using GAA FET technology on a 50 mm2 device.

Market Segmentation 

By Application

In terms of application, the market for gate all around FET technology is segment into inverter and UPS, energy and power, consumer electronics, industrial system, and others. 

GAA FET will replace FINFETs in many applications in the next years. Consumer electronics products like cellphones, televisions, computers, and many others use GAA FETs. They are utilize by businesses that design semiconductors or chips. A crucial use of GAA FET technology in the semiconductor industry is the design of integrated circuits. They can be use as low voltage switches (less than 200 V), electronic switches for power control, and switches in energy-saving appliances like inverters. Smart gadgets use several GAA FET applications to improve the functionality of their processors. In the upcoming years, the market for GAA FETs will see increased potential due to the growing demand in the consumer electronics sector.

Regional Analysis 

North America dominates the market for global gate all around FET technology. The GAAFET Technology market is anticipate to grow rapidly due to increasing demand, sophisticated equipment and technology, higher revenues, and initiatives to increase consumer awareness of the need. The US President’s budget proposal for 2021 included more than $1.7 billion for the National Nanotechnology Initiative, and as nanotechnology is one of the key prerequisites for GAAFETs, there is a significant opportunity for growth and development of the global GAAFET technology market. Asia-Pacific regional market will expand due to its fast expanding population levels.

Key Players 

  • Power Integration
  • STMicro
  • NXP Semiconductors
  • ABB Group
  • Toshiba Corporation
  • IXYS Corporation
  • Digi-Key
  • Fairchild Semiconductor
  • Renesas Corporation
  • Infineon Technologies
  • Samsung

The market worth of gate all around FET technology in 2021 was worth USD 30.06 million. And by 2030 it will be worth USD 472.25 million at a 35.8% CAGR during the forecast period. The improvement of the breakdown voltage of Gate-All-Around FET (GAAFET) Technology is the main driver of the global market growth for this technology. Additionally, the market for Gate-All-Around FET (GAAFET) Technology is primarily drive by reduce energy losses. Additionally, GAAFET has increased durability, high input impudence, and high efficiency, which help drive the market’s expansion.¬†

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